LTM - Laboratoire des Technologies de la Micro-�lectronique

Publications

Corinne Perret — 2009-04-29T12:07:21Z

Articles
2007
Etch mechanisms of hybrid low-k material (SiOCH with porogen) in fluorocarbon based plasma
D. Eon, M. Darnon, T. Chevolleau, T. David, L. Vallier, O. Joubert
J. Vac. Sci. Technol.B, in press (2007)
Analyses of chamber walls coatings during the patterning of ultra low-k materials with a metal hard mask : consequences on cleaning strategies
T. Chevolleau, M. Darnon, T. David, N. Posseme, J. Torres and O. Joubert
J. Vac. Sci. Technol.B, in press (2007)
2006
Etching (...)

Journ�es scientifiques 2008

Corinne Perret — 2008-10-16T12:23:17Z

Introduction g�n�rale
Olivier JOUBERT
Bilan 2007-2008 et perspectives 2008-2009
Pr�sentations � Gravure Plasma �
Introduction par Laurent VALLIER
Axes d'�tudes, moyens humains et contractuels, collaborations et perspectives
Erwin PARGON
Activit� plasma-r�sine
Kevin MENGUELTI
Impact des plasmas de Cure sur les r�sines 193 nm
Mickael MARTIN
Impact des proc�d�s plasmas sur le LWR des r�sines 193 nm
David VEMPAIRE
UV LEDs in BBUV absorption spectroscopy
Laurene BABAUD
D�veloppement et optimisation d'un (...)

High K dielectric materials

Corinne Perret — 2008-01-22T16:16:43Z

DIELECTRICS IN MICROELECTRONICS
Responsible : C. Vall�e, MdC UJF (christophe.vall�e@cea.fr)
Actors : M. Bonvalot, MdC UJF P. Gonon, MdC UJF, M. Kahn, PhD
This activity focuses on the study of high-dielectric constant ("high-k") materials for Metal-Insulator-Metal (MIM) capacitors. Metal-Insulator-Metal (MIM) capacitors are components which are found in many integrated circuits where they are used for decoupling, filtering, analog-to-digital conversion, and other RF functions. Up to now SiO2 and (...)

Open positions at LTM

Corinne Perret — 2007-10-23T08:36:25Z

New post doc positions and traning courses are available from now at LTM.
See Details here

Applied Materials etch platform

Corinne Perret — 2007-06-05T12:13:09Z

Applied Materials etch platform equipped with three 200 mm plasma chambers : poly chamber (DPS), metal chamber (DPS+), dielectric chamber (eMax). The platform is connected to a customized XPS analysis chamber thus allowing vacuum transfer of the processed wafer for further surface analysis. See Fig. 1
Fig. 2 shows the customized XPS chamber configuration that allows analysing full 200 mm wafers.
Each chamber was modified to implement diagnostics such as mass spectrometry, Laser or (...)

Staff

Corinne Perret — 2007-06-05T09:31:07Z

Permanet staff :
Chevolleau Thierry
Cunge Gilles
Inglebert Ren� Louis
Joubert Olivier
Pargon Erwine
Sidor Fr�d�ric
Touzeau Michel
Vallier Laurent
Non Permanent staff :
Babaud Lor�ne
Bazin Arnaud
Beaurain Arnaud
Bouyssou R�gis
Chaabouni Hamed
Ducote Julien
Gras Rapha�l
Jorel Corantin
Luere Olivier
Marquet S�verine
Martin Mickael
Mellhoui Xavier
Menguelti Kevin
Molli-Boulock Richard
Morel Thomas
Ramos Raphael
Sungauer (...)

Plasma etching for Nanoelectronics / Back end of the line

Corinne Perret — 2007-06-05T09:27:22Z

Contact : Thierry CHEVOLLEAU
Integration of materials at low constant dielectric : Plasma Processes for Patterning of Porous SiOCH Damascene Structures
For the next technological generations, the traditional challenges faced by etch plasmas (profile control, selectivity, CDs, uniformity and defects,...) become more and more difficult, intensified by the use of new materials, the limitations of lithography, and the recent introduction of new device structures and integration schemes. (...)

Plasma etching for Nanoelectronics / Front end of the line

Corinne Perret — 2007-06-05T09:25:27Z

contact : Laurent VALLIER
Within the race of integration and performance, it's most likely that the architectures and materials used for the conventional planar CMOS technology will be replaced with new ones such as Gate All Around, or FinFET with new materials stacked in the devices. As an example, High k metal gate are already under development. Therefore it is mandatory to asses new technologies for the IC's fabrication. The goal in the future will be not only to achieve sub-nanometric (...)

Fundamental studies of the plasma / plasma-surface interaction

Corinne Perret — 2007-06-05T09:20:46Z

contact : Gilles CUNGE
Aim of the subject
In the semiconductor manufacturing industry, one major challenge is the critical dimension (CD) control of plasma-etched structures. The CD must be controlled within a few nanometers across large-size wafers but also from wafer to wafer. Regarding plasma etching, changes in the reactor wall conditions are clearly identified as an important cause of process drifts. Indeed, deposition of etch products (or parent-gas fragments) on all the inner parts (...)

Stepper NIL (Nano Imprint Lithography)

Corinne Perret — 2006-10-11T11:50:54Z

Dans le cadre d'un programme de d�veloppement commun (Joint Devlopment Program) avec la soci�t� autrichienne Electron Vision Group, le LTM et le CEA-LETI, nous avons fait l'acquisition en juin 2006 d'un �quipement d�di� � la lithographie par nanoimpression assist�e par Ultra Violet. Cet �quipement prototype fonctionne selon le principe de step, flash and repeat et permet de reproduire les motifs nanom�triques �labor�s sur la surface d'un tampon transparent dans les mat�riaux polym�res de tr�s faible viscosit� et (...)